The Information Machine
ConcludedRan 70 days4 sourcesupdated 22 Oct 2026

Nvidia's NVHBM base die at TSMC

The gist

Latest: Samsung to Build Nvidia Custom HBM Base Die on TSMC 3nm

The arrangement concentrates base die production for all three major HBM suppliers at TSMC, making TSMC a critical node in the AI memory supply chain. Capacity constraints at TSMC or delays in Samsung's in-house alternative could affect supply of Nvidia's custom HBM.

When stories like this move, I write about them in an email each morning.

One free email each morning, around 8 AM US Eastern.

The full picture

Samsung will manufacture the base die for NVHBM, a custom HBM product jointly developed with Nvidia, using TSMC's 3nm process, per Seoul Economic Daily citing unnamed industry sources. No company has officially commented. The base die is the logic layer at the bottom of the HBM stack; Nvidia moved its memory controller there to free up compute space on the GPU die. Nvidia requested the TSMC 3nm process and wants a standardized base die across Samsung, SK Hynix, and Micron to maintain consistent performance. The arrangement is described as the first time Samsung and TSMC have collaborated on building HBM itself.

Samsung's own 4nm base die production is limited to portions of Hwaseong Line 17 and Pyeongtaek P3, making it difficult to absorb custom HBM volumes. Samsung Foundry is simultaneously validating an in-house NVHBM base die production plan, and base die production has not been permanently locked to TSMC. Samsung is also testing its own 2nm process as a further fallback. TSMC's 3nm lines, which also produce high-performance computing and smartphone chips, face their own potential ceiling on allocated base die capacity.

To expand 3nm supply, TSMC plans to add two new production lines at Fab 18 in Tainan, with mass production starting in the first half of next year and the first half of 2027, and is also equipping its second Arizona and second Kumamoto fabs with 3nm lines. The result of the current arrangement is that all three major memory makers become buyers of TSMC 3nm logic wafers for every NVHBM stack. Seoul Economic Daily reported the chips boost memory bandwidth by up to 30%. TrendForce projects HBM will account for 30% of the top three DRAM makers' wafer input by end of 2027, up from 18% at end of 2025.

Beyond the base die, Nvidia announced at GTC Berlin that deals with Samsung Electro Mechanics, IBIDEN, and Unimicron will increase its substrate capacity 2.5X over three years. Samsung Electro Mechanics signed what Korean media described as its largest-ever substrate contract with Nvidia, covering substrates for AI chips and networking switches with new dedicated lines in Sejong and Busan. Nvidia is giving KYEC a $1.1 billion advance to build new test facilities in the United States, and Amkor plans to grow interposer capacity in Korea by more than 300% by end of 2028. Samsung Electro Mechanics also entered a 360.5 billion won (~$267 million) long-term deal for package substrates used in memory semiconductors for all of 2027 with an unnamed global customer, described as the first long-term supply agreement Samsung Electro Mechanics has made specifically for package substrates.

How it developed
22 October 2026

Korean media reports Samsung Electro Mechanics signed its largest-ever substrate contract with Nvidia; Nvidia announces 2.5X substrate capacity expansion over three years

19 October 2026

The Neuron Daily reports Samsung-TSMC collaboration and up to 30% memory bandwidth improvement claim

18 October 2026added 20 Oct

Samsung's 4nm production lines lack the capacity for Nvidia's NVHBM base die volumes, Seoul Economic Daily reported October 18-19, explaining why Nvidia requested TSMC's 3nm process and wants the base die standardized across all three HBM suppliers.

The report described the arrangement as the first Samsung-TSMC collaboration on HBM itself, with no official comment from either company. Samsung Foundry is simultaneously validating an in-house base die plan and testing its 2nm process as a backup if TSMC capacity becomes insufficient.

1 September 2026

Reports detailed Samsung's 8-layer NVHBM variant targeting 18 Gbps as a near-term drop-in product

26 August 2026

Nvidia announced NVHBM specs: 30% higher bandwidth, 15% lower power than commodity HBM4e, available to NVLink Fusion partners

14 August 2026

TrendForce reported Samsung may repurpose NRD-K Line 2 for 2nm HBM base die production

Sources

Get the daily email

When stories like this move, I write about them in an email each morning.

One free email each morning, around 8 AM US Eastern.

See the latest edition · Privacy